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M5M51R16AWG-12H - 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

General Description

The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology.

The use of CMOS cells and periphery results in a high density and low power static RAM.

Key Features

  • S STATIC RAM (4) TIMING.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M51R16AWG-12HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51R16AWG-12L 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51R16AWG-12LI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51R16AWG-10H 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51R16AWG-10HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

Full PDF Text Transcription (Reference)

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MITSUBISHI LSIs M5M51R16AWG -10L, -12L, -15L, -10H, -12H, -15H 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application. The M5M51R16AWG is packaged in a 48-pin chip scale package which is a high reliability and high density surface mount device (SMD). Using this type of devices, it becomes very easy to design a small system. The M5M51R16AWG is fully compatible with the M5M51R16WG.