M5M5255FP-70LL Datasheet | Mitsubishi Electric

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. PIN CONFIGURATION (TOP VIEW) A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 1 2 3 4 5 6 7 8 9 10 11 12 13 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /W A13 A8 A9 A11 S2 A10 /S1 DQ8 DQ7 DQ6 DQ5 DQ4 M5M5255DP,FP FEATURE Type Access Power supply current time Active Stand-by (max) (max) (max) 45ns 55ns 70ns 45ns 55ns 70ns 55m A (Vcc=5.5V) DQ3 GND 14 M5M5255DP, FP-45LL M5M5255DP, FP-55LL M5M5255DP, FP-70LL M5M5255DP, FP-45XL M5M5255DP, FP-55XL M5M5255DP, FP-70XL Outline 28P4 (DP) 28P2W-C (DFP) 20µA (Vcc=5.5V) 5µA (Vcc=5.5V) 0.05µA (Vcc=3.0V, Typical) - Single +5V power supply - No clocks, no refresh - Data-Hold on +2.0V power supply - Directly TTL patible : all inputs and outputs - Three-state outputs : OR-tie capability - Simple memory expantion by /S1, S2 - mon Data I/O - Battery backup capability - Low stand-by current- - - - - - - - - - 0.05µA(typ.) PACKAGE M5M255DP M5M5255DFP : 28 pin 600 mil DIP : 28 pin 450 mil SOP APPLICATION Small capacity memory units MITSUBISHI ELECTRIC '97.4.7 MITSUBISHI LSIs M5M5255DP,FP -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC...