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M5M5256DP-55XL - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

Datasheet Summary

Description

The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.

Features

  • herwise noted) Parameter Power down supply voltage Chip select input /S Test conditions 2.2V≤VCC(PD) 2V≤VCC(PD)≤2.2V Vcc = 3V,/S≥Vcc-0.2V, Other inputs=0~Vcc -LL -XL Min 2 2.2 Limits Typ Max Unit V V VCC(PD) (Note 7) V 10 2 Icc (PD) Power down supply current uA 0.05 (No.

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Datasheet Details

Part number M5M5256DP-55XL
Manufacturer Mitsubishi
File Size 63.41 KB
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Datasheet download datasheet M5M5256DP-55XL Datasheet
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'97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package).
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