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M5M5256DRV-10VLL - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

Description

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.

Features

  • (Ta = 0~70°C, Vcc=2.7~3.6V, unless otherwise noted) Parameter Power down supply voltage Chip select input /S Power down supply current Test conditions Min 2 2 -VLL -VXL Limits Typ Max Unit V V Vcc = 3V,/S≥Vcc-0.2V, Other inputs=0~Vcc (Note 7) 10 2 uA 0.05 (Note 8) Note7: ICC (PD) = 1uA i.

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Datasheet Details

Part number M5M5256DRV-10VLL
Manufacturer Mitsubishi
File Size 63.03 KB
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Datasheet download datasheet M5M5256DRV-10VLL Datasheet
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Full PDF Text Transcription

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'97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package).
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