| Part number | M5M5V108CKV-10HI |
|---|---|
| Datasheet | M5M5V108CKV-10HI_MitsubishiElectricSemiconductor.pdf |
| File Size | 87.13 KB |
| Manufacturer | Mitsubishi Electric |
| Description | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
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The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application.
See all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| M5M5V108CKV-10H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKV-10X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKV-10XI | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKV-70H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKV-70HI | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKV-70X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKV-70XI | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-10H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-10HI | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-10X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
