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M5M5V208KV-12LL - 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

General Description

The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology.

The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM.

Key Features

  • -BIT) CMOS STATIC RAM Write cycle ( S1 control mode.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M5V208KV-12LL-W 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V208KV-12L 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V208KV-12L-W 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V208KV-10L 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V208KV-10L-W 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

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'97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -70L , -85L, -10L , -12L, -70LL, -85LL, -10LL, -12LL 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory applications where high reliability, large storage, simple interfacing and battery back-up are important design objectives. The M5M5V208VP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).