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MITSUBISHI RF POWER MODULE
M68701
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
OUTLINE DRAWING
60.5±1 57.5±0.5 50.4±1 2-R1.6+0.2 0
Dimensions in mm
BLOCK DIAGRAM
2
3
1
4 5
1
2
3
4
5
0.45±0.2 8.3±1 21.3±1 43.3±1 51.3±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω Ratings 17 5.5 10 10 -30 to +100 -40 to +100 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.
M68701 Datasheet
