MGF0921A Overview
The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0921A Key Features
- High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
- High power gain Gp=17dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=40%(TYP.) @f=1.9GHz,Pin=17dBm
- Hermetic Package
- For UHF Band power amplifiers
- Vds=10V
- Ids=500mA
- Rg=200Ω
- 01:Tape & Reel(1K), -03:Trai(50pcs)