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MGF0921A Key Features

  • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
  • High power gain Gp=17dB(TYP.) @f=1.9GHz
  • High power added efficiency ηadd=40%(TYP.) @f=1.9GHz,Pin=17dBm
  • Hermetic Package
  • For UHF Band power amplifiers
  • Vds=10V
  • Ids=500mA
  • Rg=200Ω
  • 01:Tape & Reel(1K), -03:Trai(50pcs)

MGF0921A Description

The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.