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MGF0921A - LnS Band GaAs FET

Description

The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Features

  • High output power Po=33dBm(TYP. ) @f=1.9GHz,Pin=17dBm.
  • High power gain Gp=17dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=40%(TYP. ) @f=1.9GHz,Pin=17dBm.
  • Hermetic Package.

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Datasheet preview – MGF0921A

Datasheet Details

Part number MGF0921A
Manufacturer Mitsubishi
File Size 429.49 KB
Description LnS Band GaAs FET
Datasheet download datasheet MGF0921A Datasheet
Additional preview pages of the MGF0921A datasheet.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm • High power gain Gp=17dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=40%(TYP.) @f=1.9GHz,Pin=17dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers Fig.
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