Datasheet Details
| Part number | MGF1601B |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 26.03 KB |
| Description | MICROWAVE POWER GaAs FET |
| Datasheet | MGF1601B_MitsubishiElectricSemiconductor.pdf |
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Overview: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs.
| Part number | MGF1601B |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 26.03 KB |
| Description | MICROWAVE POWER GaAs FET |
| Datasheet | MGF1601B_MitsubishiElectricSemiconductor.pdf |
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The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic for microstrip circuits.
package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MGF1601 | MICROWAVE POWER GaAs FET | Mitsubishi Electric |
| Part Number | Description |
|---|---|
| MGF1601B-01 | High-power GaAs FET |
| MGF1202 | GaAs FET |
| MGF1302 | LOW NOISE GaAs FET |
| MGF1303B | LOW NOISE GaAs FET |
| MGF1323 | Low Noise GaAs FET |
| MGF1403B | LOW NOISE GaAs FET |
| MGF1423 | Low Noise GaAs FET |
| MGF1423B | SMALL SIGNAL GaAs FET |
| MGF1425 | Low Noise GaAs FET |
| MGF1801B | MICROWAVE POWER GaAs FET |