MGF1601B datasheet by Mitsubishi Electric.
| Part number | MGF1601B |
|---|---|
| Datasheet | MGF1601B_MitsubishiElectricSemiconductor.pdf |
| File Size | 26.03 KB |
| Manufacturer | Mitsubishi Electric |
| Description | MICROWAVE POWER GaAs FET |
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The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MGF1601 | MICROWAVE POWER GaAs FET | Mitsubishi Electric |
View all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| MGF1601B-01 | High-power GaAs FET |
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| MGF1303B | LOW NOISE GaAs FET |
| MGF1323 | Low Noise GaAs FET |
| MGF1403B | LOW NOISE GaAs FET |
| MGF1423 | Low Noise GaAs FET |
| MGF1423B | SMALL SIGNAL GaAs FET |
| MGF1425 | Low Noise GaAs FET |
| MGF1801B | MICROWAVE POWER GaAs FET |
