MGF1601B
MGF1601B is manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR GaAs FET
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable
OUTLINE DRAWING
4MIN.
Unit:millimeters
4MIN.
0.5±0.15
Features
- High output power at 1dB gain pression P1dB=21.8dBm(TYP.)
- High linear power gain GLP=8dB(TYP.) @f=8GHz
0.5±0.15
@f=8GHz
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.5±0.2
QUALITY GRADE
- GG
REMENDED BIAS CONDITIONS
- VDS=6V
-...
