MGF1951A Key Features
- High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz
- Leadless Ceramic Package
MGF1951A is Medium Power Microwave MESFET manufactured by Mitsubishi Electric.
| Part Number | Description |
|---|---|
| MGF1902B | TAPE CARRIER LOW NOISE GaAs FET |
| MGF1903B | TAPE CARRIER LOW NOISE GaAs FET |
| MGF1923 | TAPE CARRIER SMALL SIGNAL GaAs FET |
| MGF1202 | GaAs FET |
| MGF1302 | LOW NOISE GaAs FET |
The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics.