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MGF2407A Datasheet High-power Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: < High-power GaAs FET (small signal gain stage) > MGF2407A S to Ku BAND / 0.

General Description

The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers.

Key Features

  • High output power Po=24.5dBm(TYP. ) @f=14.5GHz.
  • High linear power gain GLP=8.0dB(TYP. ) @f=14.5GHz.
  • High power added efficiency P. A. E. =30%(TYP. ) @f=14.5GHz,P1dB.

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