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MGF2407A

Manufacturer: Mitsubishi Electric

MGF2407A datasheet by Mitsubishi Electric.

MGF2407A datasheet preview

MGF2407A Datasheet Details

Part number MGF2407A
Datasheet MGF2407A_MitsubishiElectricSemiconductor.pdf
File Size 119.52 KB
Manufacturer Mitsubishi Electric
Description High-power GaAs FET
MGF2407A page 2 MGF2407A page 3

MGF2407A Overview

The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers.

MGF2407A Key Features

  • High output power Po=24.5dBm(TYP.) @f=14.5GHz
  • High linear power gain GLP=8.0dB(TYP.) @f=14.5GHz
  • High power added efficiency P.A.E.=30%(TYP.) @f=14.5GHz,P1dB
  • S to Ku Band power amplifiers
  • Vds=10V
  • Ids=75mA Refer to Bias Procedure
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