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MGF2407A - High-power GaAs FET

Description

The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers.

Features

  • High output power Po=24.5dBm(TYP. ) @f=14.5GHz.
  • High linear power gain GLP=8.0dB(TYP. ) @f=14.5GHz.
  • High power added efficiency P. A. E. =30%(TYP. ) @f=14.5GHz,P1dB.

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Datasheet preview – MGF2407A

Datasheet Details

Part number MGF2407A
Manufacturer Mitsubishi Electric
File Size 119.52 KB
Description High-power GaAs FET
Datasheet download datasheet MGF2407A Datasheet
Additional preview pages of the MGF2407A datasheet.

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Full PDF Text Transcription

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< High-power GaAs FET (small signal gain stage) > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES  High output power Po=24.5dBm(TYP.) @f=14.5GHz  High linear power gain GLP=8.0dB(TYP.) @f=14.5GHz  High power added efficiency P.A.E.=30%(TYP.) @f=14.
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