MGF2407A Datasheet | Mitsubishi Electric

DESCRIPTION The MGF2407A, power Ga As FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES - High output power Po=24.5d Bm(TYP.) @f=14.5GHz - High linear power gain GLP=8.0d B(TYP.) @f=14.5GHz - High power added efficiency P.A.E.=30%(TYP.) @f=14.5GHz,P1d B APPLICATION - S to Ku Band power amplifiers QUALITY - IG REMENDED BIAS CONDITIONS - Vds=10V - Ids=75m A Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter VGDO VGSO ID IGR IGF PT- 1 Tch Tstg Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature - 1:Tc=25C Ratings -15 -15 200 -0.6 2.5 1.5 175 -65 to +175 Unit V V m A m A m A W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making...