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MGF2415A

Manufacturer: Mitsubishi Electric

MGF2415A datasheet by Mitsubishi Electric.

MGF2415A datasheet preview

MGF2415A Datasheet Details

Part number MGF2415A
Datasheet MGF2415A_MitsubishiElectricSemiconductor.pdf
File Size 615.93 KB
Manufacturer Mitsubishi Electric
Description High-power GaAs FET
MGF2415A page 2 MGF2415A page 3

MGF2415A Overview

The MGF2415A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers.

MGF2415A Key Features

  • High output power P1dB=27.5dBm(T.Y.P) @f=14.5GHz
  • High linear gain GLP=7.5dB(TYP.) @f=14.5GHz
  • High power added efficiency P.A.E=29%(TYP.) @f=14.5GHz,P1dB
  • Hermetically sealed metal package
  • For L to Ku band power amplifiers
  • Vds=10V
  • Ids=150mA
  • Rg=1KΩ
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