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MGF2430A - High-power GaAs FET

Description

The MGF2430A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers.

Features

  • High output power P1dB=30.5dBm(T. Y. P) @f=14.5GHz.
  • High linear gain GLP=6.5dB(TYP. ) @f=14.5GHz.
  • High power added efficiency P. A. E=27%(TYP. ) @f=14.5GHz,P1dB.
  • Hermetically sealed metal package.

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Datasheet preview – MGF2430A

Datasheet Details

Part number MGF2430A
Manufacturer Mitsubishi Electric
File Size 628.17 KB
Description High-power GaAs FET
Datasheet download datasheet MGF2430A Datasheet
Additional preview pages of the MGF2430A datasheet.

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Full PDF Text Transcription

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< High-power GaAs FET (small signal gain stage) > MGF2430A L to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers. FEATURES • High output power P1dB=30.5dBm(T.Y.P) @f=14.5GHz • High linear gain GLP=6.5dB(TYP.) @f=14.5GHz • High power added efficiency P.A.E=27%(TYP.) @f=14.
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