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MGF2430A

Manufacturer: Mitsubishi Electric

MGF2430A datasheet by Mitsubishi Electric.

MGF2430A datasheet preview

MGF2430A Datasheet Details

Part number MGF2430A
Datasheet MGF2430A_MitsubishiElectricSemiconductor.pdf
File Size 628.17 KB
Manufacturer Mitsubishi Electric
Description High-power GaAs FET
MGF2430A page 2 MGF2430A page 3

MGF2430A Overview

The MGF2430A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers.

MGF2430A Key Features

  • High output power P1dB=30.5dBm(T.Y.P) @f=14.5GHz
  • High linear gain GLP=6.5dB(TYP.) @f=14.5GHz
  • High power added efficiency P.A.E=27%(TYP.) @f=14.5GHz,P1dB
  • Hermetically sealed metal package
  • For L to Ku band power amplifiers
  • Vds=10V
  • Ids=300mA
  • Rg=500Ω
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