MGF2430A
DESCRIPTION
The MGF2430A, Ga As FET with an N-channel schottky gate, is designed for L to Ku band amplifiers.
FEATURES
- High output power P1d B=30.5d Bm(T.Y.P) @f=14.5GHz
- High linear gain GLP=6.5d B(TYP.) @f=14.5GHz
- High power added efficiency P.A.E=27%(TYP.) @f=14.5GHz,P1d B
- Hermetically sealed metal package
APPLICATION
- For L to Ku band power amplifiers
QUALITY
- IG
OUTLINE DRAWING
REMENDED BIAS CONDITIONS
- Vds=10V
- Ids=300m A
- Rg=500Ω
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to Source Voltage
VGSO Gate to source voltage
IDSS Saturated drain current
IGR Reverse gate current
IGF Forward gate current
PT- 1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
- 1:Tc=25°C
(Ta=25°C)
Ratings
-15 -15 800 -2.4 10 5 175 -65 to +175
Unit
V V m A m A m A W °C °C
GF-17
Unit：millimeters
① GATE ② SOURCE ③ DRAIN
Electrical...
