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MGF2445A - High-power GaAs FET

Description

The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers.

Features

  • High output power Po=32.0dBm(TYP. ) @f=12GHz.
  • High linear power gain GLP=6.0dB(TYP. ) @f=12GHz.

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Datasheet preview – MGF2445A

Datasheet Details

Part number MGF2445A
Manufacturer Mitsubishi Electric
File Size 115.66 KB
Description High-power GaAs FET
Datasheet download datasheet MGF2445A Datasheet
Additional preview pages of the MGF2445A datasheet.

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Full PDF Text Transcription

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< High-power GaAs FET (small signal gain stage) > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES  High output power Po=32.0dBm(TYP.) @f=12GHz  High linear power gain GLP=6.0dB(TYP.) @f=12GHz APPLICATION  S to Ku Band power amplifiers QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds=10V  Ids=450mA Absolute maximum ratings (Ta=25C) Symbol Parameter VGDO VGSO ID IGR IGF PT*1 Tch Tstg Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature *1:Tc=25C Ratings -15 -15 1500 -3.
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