MGF2445A Datasheet | Mitsubishi Electric

DESCRIPTION The MGF2445A, power Ga As FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES - High output power Po=32.0d Bm(TYP.) @f=12GHz - High linear power gain GLP=6.0d B(TYP.) @f=12GHz APPLICATION - S to Ku Band power amplifiers QUALITY - IG REMENDED BIAS CONDITIONS - Vds=10V - Ids=450m A Absolute maximum ratings (Ta=25C) Symbol Parameter VGDO VGSO ID IGR IGF PT- 1 Tch Tstg Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature - 1:Tc=25C Ratings -15 -15 1500 -3.6 15 10 175 -65 to +175 Unit V V m A m A m A W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that...