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MGF4916G - SUPER LOW NOISE InGaAs HEMT

General Description

The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.

Key Features

  • Low noise figure @f=12GHz MGF4916G:NFmin. =0.80dB(MAX. ) MGF4919G:NFmin. =0.50dB(MAX. ).
  • High associated gain Gs=12.0dB(MIN. ) @f=12GHz 2 2 0.5±0.15 3.

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Other Datasheets by Mitsubishi Electric

Part Number Description
MGF4919G SUPER LOW NOISE InGaAs HEMT
MGF4951A SUPER LOW NOISE InGaAs HEMT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series is mounted in the super 12 tape. 0.5±0.15 FEATURES • Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.) • High associated gain Gs=12.0dB(MIN.) @f=12GHz 2 2 0.5±0.15 3 APPLICATION L to Ku band low noise amplifiers. ø1.8±0.