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MGF4916G

MGF4916G is SUPER LOW NOISE InGaAs HEMT manufactured by Mitsubishi Electric.
MGF4916G datasheet preview

MGF4916G Datasheet

Part number MGF4916G
Download MGF4916G Datasheet (PDF)
File Size 19.34 KB
Manufacturer Mitsubishi Electric
Description SUPER LOW NOISE InGaAs HEMT
MGF4916G page 2 MGF4916G page 3

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MGF4916G Distributor

MGF4916G Description

The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491 G series is mounted in the super 12 tape.

MGF4916G Key Features

  • Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)
  • High associated gain Gs=12.0dB(MIN.) @f=12GHz
  • VDS=2V,ID=10mA
  • Refer to Bias Procedure

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