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MGF4919G Datasheet SUPER LOW NOISE InGaAs HEMT

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs.

General Description

The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.

The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for microstrip circuits.

The MGF491*G series is mounted in the super 12 tape.

Key Features

  • Low noise figure @f=12GHz MGF4916G:NFmin. =0.80dB(MAX. ) MGF4919G:NFmin. =0.50dB(MAX. ).
  • High associated gain Gs=12.0dB(MIN. ) @f=12GHz 2 2 0.5±0.15 3.