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MGF4919G

Manufacturer: Mitsubishi Electric

MGF4919G datasheet by Mitsubishi Electric.

MGF4919G datasheet preview

MGF4919G Datasheet Details

Part number MGF4919G
Datasheet MGF4919G_MitsubishiElectricSemiconductor.pdf
File Size 19.34 KB
Manufacturer Mitsubishi Electric
Description SUPER LOW NOISE InGaAs HEMT
MGF4919G page 2 MGF4919G page 3

MGF4919G Overview

The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491 G series is mounted in the super 12 tape.

MGF4919G Key Features

  • Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)
  • High associated gain Gs=12.0dB(MIN.) @f=12GHz
  • VDS=2V,ID=10mA
  • Refer to Bias Procedure

MGF4919E from other manufacturers

View MGF4919E datasheet index

Brand Logo Part Number Description Other Manufacturers
Mitsubishi Electric Logo MGF4919E (MGF4910E Series) Super Low Noise InGaAs HEMT Mitsubishi Electric
Mitsubishi Electric logo - Manufacturer

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MGF4919G Distributor

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