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MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures
OUTLINE DRAWING
4.0±0.2 1.85±0.2
1
Unit:millimeters
minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series is mounted in the super 12 tape.
0.5±0.15
FEATURES
• Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.) • High associated gain Gs=12.0dB(MIN.) @f=12GHz
2
2
0.5±0.15
3
APPLICATION
L to Ku band low noise amplifiers.
ø1.8±0.
MGF4919G Datasheet
