MGF4919G Description
The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491 G series is mounted in the super 12 tape.
MGF4919G Key Features
- Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)
- High associated gain Gs=12.0dB(MIN.) @f=12GHz
- VDS=2V,ID=10mA
- Refer to Bias Procedure