MGF4952A Description
The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
MGF4952A is SUPER LOW NOISE InGaAs HEMT manufactured by Mitsubishi Electric.
| Part Number | Description |
|---|---|
| MGF4951A | SUPER LOW NOISE InGaAs HEMT |
| MGF4916G | SUPER LOW NOISE InGaAs HEMT |
| MGF4919G | SUPER LOW NOISE InGaAs HEMT |
| MGF4316G | Super Low Noise InGaAs HEMT |
| MGF4319G | Super Low Noise InGaAs HEMT |
The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.