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MGF4952A Datasheet Super Low Noise Ingaas Hemt

Manufacturer: Mitsubishi Electric

Overview: June/2004 MITSUBISHI SEMICONDUCTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic.

General Description

The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Outline Drawing

Key Features

  • Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ. ) MGF4952A : NFmin. = 0.60dB (Typ. ) Fig.1 High associated gain @ f=12GHz Gs = 12.0dB (Typ. ).

MGF4952A Distributor