MGF4952A Overview
The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
MGF4952A datasheet by Mitsubishi Electric.
| Part number | MGF4952A |
|---|---|
| Datasheet | MGF4952A_MitsubishiElectricSemiconductor.pdf |
| File Size | 180.67 KB |
| Manufacturer | Mitsubishi Electric |
| Description | SUPER LOW NOISE InGaAs HEMT |
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The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
View all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| MGF4951A | SUPER LOW NOISE InGaAs HEMT |
| MGF4916G | SUPER LOW NOISE InGaAs HEMT |
| MGF4919G | SUPER LOW NOISE InGaAs HEMT |
| MGF4316G | Super Low Noise InGaAs HEMT |
| MGF4319G | Super Low Noise InGaAs HEMT |
| MGF4714CP | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT |
| MGF4841CL | Power GaAs HEMT |
| MGF0904A | High-power GaAs FET |
| MGF0905A | High-power GaAs FET |
| MGF0906B | High-power GaAs FET |