MGFC38V5867 Datasheet | Mitsubishi Electric

DESCRIPTION The MGFC38V5867 is an internally impedance-matched Ga As power FET especially designed for use in 5.8 - 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=6W (TYP.) @f=5.8 - 6.75GHz - High power gain GLP=10d B (TYP.) @f=5.8 - 6.75GHz APPLICATION - VSAT 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 REMENDED BIAS CONDITIONS - VDS=10V - ID=1.8A - RG=100ohm GF-8 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 ID Drain...