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MGFC38V5867 - C band internally matched power GaAs FET

Description

The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8

6.75 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=6W (TYP. ) @f=5.8.
  • 6.75GHz.
  • High power gain GLP=10dB (TYP. ) @f=5.8.
  • 6.75GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=6W (TYP.) @f=5.8 – 6.75GHz  High power gain GLP=10dB (TYP.) @f=5.8 – 6.75GHz APPLICATION  VSAT 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 11.3 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 0.2 12.0 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=1.
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