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MGFC38V5867

Manufacturer: Mitsubishi Electric
MGFC38V5867 datasheet preview

Datasheet Details

Part number MGFC38V5867
Datasheet MGFC38V5867_MitsubishiElectricSemiconductor.pdf
File Size 104.07 KB
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
MGFC38V5867 page 2 MGFC38V5867 page 3

MGFC38V5867 Overview

The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC38V5867 Key Features

  • High output power
  • 6.75GHz
  • High power gain
  • 6.75GHz
  • VDS=10V
  • ID=1.8A
  • RG=100ohm
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