Download MGFC38V5867 Datasheet PDF
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MGFC38V5867 Description

The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC38V5867 Key Features

  • High output power
  • 6.75GHz
  • High power gain
  • 6.75GHz
  • VDS=10V
  • ID=1.8A
  • RG=100ohm