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MGFC38V5964 Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

Overview: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W 11.

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General Description

The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=6W (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power gain GLP=10dB (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=5.9.
  • 6.4GHz.
  • Low distortion [ item -51] IM3=-45dBc (TYP. ) @Po=27dBm S. C. L.

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