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MGFC38V5964 - C band internally matched power GaAs FET

Description

The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9

6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=6W (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power gain GLP=10dB (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=5.9.
  • 6.4GHz.
  • Low distortion [ item -51] IM3=-45dBc (TYP. ) @Po=27dBm S. C. L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W 11.3 DESCRIPTION The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=6W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=10dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=32% (TYP.) @f=5.9 – 6.4GHz  Low distortion [ item -51] IM3=-45dBc (TYP.) @Po=27dBm S.C.L. APPLICATION  item 01 : 5.9 – 6.4 GHz band power amplifier  item 51 : 5.9 – 6.4 GHz band digital radio communication 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.
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