• Part: MGFC38V5964
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 107.71 KB
Download MGFC38V5964 Datasheet PDF
Mitsubishi Electric
MGFC38V5964
DESCRIPTION The MGFC38V5964 is an internally impedance-matched Ga As power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=6W (TYP.) @f=5.9 - 6.4GHz - High power gain GLP=10d B (TYP.) @f=5.9 - 6.4GHz - High power added efficiency P.A.E.=32% (TYP.) @f=5.9 - 6.4GHz - Low distortion [ item -51] IM3=-45d Bc (TYP.) @Po=27d Bm S.C.L. APPLICATION - item 01 : 5.9 - 6.4 GHz band power amplifier - item 51 : 5.9 - 6.4 GHz band digital radio munication 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 QUALITY - IG REMENDED BIAS CONDITIONS - VDS=10V - ID=1.8A - RG=100ohm Refer...