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MGFC39V3436 Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

Overview: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W 11.

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General Description

The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=8W (TYP. ) @f=3.4.
  • 3.6GHz.
  • High power gain GLP=12.5dB (TYP. ) @f=3.4.
  • 3.6GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=3.4.
  • 3.6GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=28dBm S. C. L.

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