MGFC39V5258 Datasheet | Mitsubishi Electric

DESCRIPTION The MGFC39V5258 is an internally impedance-matched Ga As power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=8W (TYP.) @f=5.2 - 5.8GHz - High power gain GLP=9.0d B (TYP.) @f=5.2 - 5.8GHz - High power added efficiency P.A.E.=30% (TYP.) @f=5.2 - 5.8GHz APPLICATION - 5.2 - 5.8 GHz band power amplifier QUALITY - IG 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 REMENDED BIAS CONDITIONS - VDS=10V - ID=2.4A Refer to Bias Procedure - RG=50ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown...