MGFC39V5258 Description
The MGFC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFC39V5258 Key Features
- High output power
- 5.8GHz
- High power gain
- 5.8GHz
- High power added efficiency
- 5.8GHz
- 5.8 GHz band power amplifier
- VDS=10V
- ID=2.4A Refer to Bias Procedure
- RG=50ohm