Mitsubishi MGFC39V5867
The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.| Part No. | MGFC39V5867 |
|---|---|
| Datasheet | MGFC39V5867 Download |
| Manufacturer |  Mitsubishi |
| Description | C band internally matched power GaAs FET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
Class A operation Internally matched to 50(ohm) system● High output power P1dB=8W (TYP.) @f=5.8 – 6.75GHz
● High power gain GLP=9dB (TYP.) @f=5.8 – 6.75GHz APPLICATION
● VSAT 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 11.3 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 0.2 12.0 RECOMMENDED BIAS CONDITIONS
● VDS=10V
● ID=2.4A
● RG=50ohm GF-8 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 ID Drain current 7.5 IGR Reverse gate current -20 IGF Forwa
