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MGFC39V6472A Datasheet

Manufacturer: Mitsubishi Electric
MGFC39V6472A datasheet preview

Datasheet Details

Part number MGFC39V6472A
Datasheet MGFC39V6472A_MitsubishiElectricSemiconductor.pdf
File Size 205.77 KB
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
MGFC39V6472A page 2

MGFC39V6472A Overview

The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC39V6472A Key Features

  • High output power
  • 7.2GHz
  • High power gain
  • 7.2GHz
  • High power added efficiency
  • 7.2GHz
  • Low distortion [item -51]
  • item 01 : 6.4
  • 7.2 GHz band power amplifier
  • item 51 : 6.4
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