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MGFC39V6472A - C band internally matched power GaAs FET

Description

The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4

7.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=8W (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power gain GLP= 9.0dB (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power added efficiency P. A. E. =28% (TYP. ) @f=6.4.
  • 7.2GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=28dBm S. C. L.

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< C band internally matched power GaAs FET > MGFC39V6472A 6.4 – 7.2 GHz BAND / 8W 11.3 DESCRIPTION The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.) @f=6.4 – 7.2GHz  High power gain GLP= 9.0dB (TYP.) @f=6.4 – 7.2GHz  High power added efficiency P.A.E.=28% (TYP.) @f=6.4 – 7.2GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=28dBm S.C.L APPLICATION  item 01 : 6.4 – 7.2 GHz band power amplifier  item 51 : 6.4 – 7.2 GHz band digital radio communication 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.
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