• Part: MGFC39V7785A
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 86.29 KB
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Mitsubishi Electric
MGFC39V7785A
DESCRIPTION The MGFC39V7785A is an internally impedance-matched Ga As power FET especially designed for use in 7.7 - 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=8W (TYP.) @f=7.7 - 8.5GHz - High power gain GLP= 7.5d B (TYP.) @f=7.7 - 8.5GHz - High power added efficiency P.A.E.=27% (TYP.) @f=7.7 - 8.5GHz - Low distortion [item -51] IM3=-45d Bc (TYP.) @Po=28d Bm S.C.L APPLICATION - item 01 : 7.7 - 8.5 GHz band power amplifier - item 51 : 7.7 - 8.5 GHz band digital radio munication 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 QUALITY - IG REMENDED BIAS CONDITIONS - VDS=10V - ID=2.4A Refer to Bias...