MGFC40V5258
DESCRIPTION
The MGFC40V5258 is an internally impedance-matched Ga As power FET especially designed for use in 5.2
- 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
- High output power
P1d B=10W (TYP.) @f=5.2
- 5.8GHz
- High power gain
GLP=9.0d B (TYP.) @f=5.2
- 5.8GHz
- High power added efficiency
P.A.E.=31% (TYP.) @f=5.2
- 5.8GHz
- Low distortion [item -51]
IM3=-45d Bc (Typ.) @Po=29.0d Bm S.C.L
APPLICATION
- item 01 : 5.2
- 5.8 GHz band microwave high power amplifier
- item 51 : 5.2
- 5.8 GHz band digital radio munication
QUALITY
- IG
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=2.4A
- RG=50ohm Refer to Bias Procedure
4.2±0.3
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
VGDO Gate to drain breakdown voltage
VGSO Gate to source breakdown voltage
ID Drain...
