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MGFC40V7177 - C band internally matched power GaAs FET

General Description

The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1

7.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=10W (TYP. ) @f=7.1.
  • 7.7GHz.
  • High power gain GLP=8.0dB (TYP. ) @f=7.1.
  • 7.7GHz.
  • High power added efficiency P. A. E. =30% (TYP. ) @f=7.1.
  • 7.7GHz.
  • Low distortion [item -51] IM3=-45dBc (Typ. ) @Po=29.0dBm S. C. L.

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Other Datasheets by Mitsubishi Electric

Part Number Description
MGFC40V7177A 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V7177B 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V7785 C band internally matched power GaAs FET
MGFC40V7785A 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V7785B 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.) @f=7.1 – 7.7GHz • High power gain GLP=8.0dB (TYP.) @f=7.1 – 7.7GHz • High power added efficiency P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz • Low distortion [item -51] IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L APPLICATION • item 01 : 7.1 – 7.7GHz band microwave high power amplifier • item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY • IG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.