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MGFC40V7177 - C band internally matched power GaAs FET

Description

The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1

7.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=10W (TYP. ) @f=7.1.
  • 7.7GHz.
  • High power gain GLP=8.0dB (TYP. ) @f=7.1.
  • 7.7GHz.
  • High power added efficiency P. A. E. =30% (TYP. ) @f=7.1.
  • 7.7GHz.
  • Low distortion [item -51] IM3=-45dBc (Typ. ) @Po=29.0dBm S. C. L.

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Datasheet preview – MGFC40V7177

Datasheet Details

Part number MGFC40V7177
Manufacturer Mitsubishi
File Size 96.83 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC40V7177 Datasheet
Additional preview pages of the MGFC40V7177 datasheet.

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Full PDF Text Transcription

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< C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.) @f=7.1 – 7.7GHz • High power gain GLP=8.0dB (TYP.) @f=7.1 – 7.7GHz • High power added efficiency P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz • Low distortion [item -51] IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L APPLICATION • item 01 : 7.1 – 7.7GHz band microwave high power amplifier • item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY • IG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.
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