• Part: MGFC40V7785
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 113.50 KB
Download MGFC40V7785 Datasheet PDF
Mitsubishi Electric
MGFC40V7785
DESCRIPTION The MGFC40V7785 is an internally impedance-matched Ga As power FET especially designed for use in 7.7 - 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=10W (TYP.) @f=7.7 - 8.5GHz - High power gain GLP=7d B (TYP.) @f=7.7 - 8.5GHz - High power added efficiency P.A.E.=32% (TYP.) @f=7.7 - 8.5GHz - Low distortion [item -51] IM3=-45d Bc (TYP.) @Po=29d Bm S.C.L APPLICATION - item 01 : 7.7 - 8.5 GHz band power amplifier - item 51 : 7.7 - 8.5 GHz band digital radio munication OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.2 (2) 17.4+/-0.3 8.0+/-0.2 2MIN (3) 20.4+/-0.2 0.1 2.4+/-0.2 15.8 4.0+/-0.4 1.4 QUALITY - IG REMENDED BIAS CONDITIONS - VDS=10V -...