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MGFC41V3642 Datasheet

Manufacturer: Mitsubishi Electric
MGFC41V3642 datasheet preview

Datasheet Details

Part number MGFC41V3642
Datasheet MGFC41V3642_MitsubishiElectricSemiconductor.pdf
File Size 87.69 KB
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
MGFC41V3642 page 2

MGFC41V3642 Overview

The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC41V3642 Key Features

  • High output power
  • 4.2GHz
  • High power gain
  • 4.2GHz
  • High power added efficiency
  • 4.2GHz
  • Low distortion [item -51]
  • item 01 : 3.6
  • 4.2 GHz band power amplifier
  • item 51 : 3.6
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MGFC41V3642 Distributor

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