• Part: MGFC41V3642
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 87.69 KB
MGFC41V3642 Datasheet (PDF) Download
Mitsubishi Electric
MGFC41V3642

Description

The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers.

Key Features

  • Class A operation Internally matched to 50(ohm) system
  • High power gain GLP=12.5dB (TYP.) @f=3.6 - 4.2GHz
  • High power added efficiency P.A.E.=40% (TYP.) @f=3.6 - 4.2GHz