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MGFC41V5964 - C band internally matched power GaAs FET

Description

The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9

6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=12W (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power gain GLP=9.5dB (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power added efficiency P. A. E. =33% (TYP. ) @f=5.9.
  • 6.4GHz.
  • Low distortion [ item -51] IM3=-45dBc (TYP. ) @Po=30dBm S. C. L.

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Datasheet preview – MGFC41V5964

Datasheet Details

Part number MGFC41V5964
Manufacturer Mitsubishi
File Size 133.38 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC41V5964 Datasheet
Additional preview pages of the MGFC41V5964 datasheet.

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Full PDF Text Transcription

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< C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=9.5dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz  Low distortion [ item -51] IM3=-45dBc (TYP.) @Po=30dBm S.C.L. APPLICATION  item 01 : 5.9 – 6.4 GHz band power amplifier QUALITY  IG OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.2 (2) 17.4+/-0.3 8.0+/-0.2 2MIN (3) 20.
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