• Part: MGFC41V5964
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 133.38 KB
MGFC41V5964 Datasheet (PDF) Download
Mitsubishi Electric
MGFC41V5964

Description

The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers.

Key Features

  • Class A operation Internally matched to 50(ohm) system
  • High power gain GLP=9.5dB (TYP.) @f=5.9 - 6.4GHz
  • High power added efficiency P.A.E.=33% (TYP.) @f=5.9 - 6.4GHz
  • Low distortion [ item -51] IM3=-45dBc (TYP.) @Po=30dBm S.C.L