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MGFC41V5964 Datasheet

Manufacturer: Mitsubishi Electric
MGFC41V5964 datasheet preview

Datasheet Details

Part number MGFC41V5964
Datasheet MGFC41V5964_MitsubishiElectricSemiconductor.pdf
File Size 133.38 KB
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
MGFC41V5964 page 2 MGFC41V5964 page 3

MGFC41V5964 Overview

The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC41V5964 Key Features

  • High output power
  • 6.4GHz
  • High power gain
  • 6.4GHz
  • High power added efficiency
  • 6.4GHz
  • Low distortion [ item -51]
  • item 01 : 5.9
  • 6.4 GHz band power amplifier
  • VDS=10V
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MGFC40V6472 C band internally matched power GaAs FET
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