Datasheet4U Logo Datasheet4U.com

MGFC45V3436A - C band internally matched power GaAs FET

Description

The MGFC45V3436A is an internally impedance-matched GaAs power FET especially designed for use in 3.4

3.6 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=32W (TYP. ) @f=3.4.
  • 3.6GHz.
  • High power gain GLP=12.0dB (TYP. ) @f=3.4.
  • 3.6GHz.
  • High power added efficiency P. A. E. =36% (TYP. ) @f=3.4.
  • 3.6GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=34.5dBm S. C. L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN.

📥 Download Datasheet

Datasheet preview – MGFC45V3436A

Datasheet Details

Part number MGFC45V3436A
Manufacturer Mitsubishi
File Size 102.29 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC45V3436A Datasheet
Additional preview pages of the MGFC45V3436A datasheet.

📁 Similar Datasheet

  • MGFC45B3436B - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC40V3742 - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC40V4450 - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC40V5964 - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC41V6472 - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC41V7177 - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC42V5867 - 16W INTERNALLHY MATCHED GaAs FET (Mitsubishi Electric)
  • MGFC42V5964A - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC42V6472A - C band internally matched power GaAs FET (Mitsubishi Electric)
  • MGFC42V7177 - C band Internally Matched Power GaAs FET (Mitsubishi Electric Semiconductor)
Other Datasheets by Mitsubishi
  • MGFC45V3642A - C band internally matched power GaAs FET
  • MGFC45V4450A - C band internally matched power GaAs FET
  • MGFC45V5053A - 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
  • MGFC45V5964A - C band internally matched power GaAs FET
  • MGFC45V6472A - C band internally matched power GaAs FET
  • MGFC40V3742A - 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
  • MGFC40V4450A - 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
  • MGFC40V5258 - C band internally matched power GaAs FET

Full PDF Text Transcription

Click to expand full text
< C band internally matched power GaAs FET > MGFC45V3436A 3.4 – 3.6 GHz BAND / 32W DESCRIPTION The MGFC45V3436A is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.) @f=3.4 – 3.6GHz  High power gain GLP=12.0dB (TYP.) @f=3.4 – 3.6GHz  High power added efficiency P.A.E.=36% (TYP.) @f=3.4 – 3.6GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) APPLICATION  item 01 : 3.4 – 3.6 GHz band power amplifier  item 51 : 3.4 – 3.
Published: |