MGFC45V3642A Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

Datasheet Details

Part number	MGFC45V3642A
Manufacturer	Mitsubishi Electric
File Size	145.04 KB
Description	C band internally matched power GaAs FET
Download	MGFC45V3642A Download (PDF)

The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

< C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.

Class A operation Internally matched to 50(ohm) system.
High output power P1dB=32W (TYP. ) @f=3.6.
4.2GHz.
High power gain GLP=11.0dB (TYP. ) @f=3.6.
4.2GHz.
High power added efficiency P. A. E. =36% (TYP. ) @f=3.6.
4.2GHz.
Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=34.5dBm S. C. L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN.

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