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MGFC45V5053A - 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET

Description

The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • (TARGET) Internally matched to 50 (Ω) system High output power P1dB=32W (TYP. ) @f=5.05~5.25GHz High power gain GLP=10.0dB (TYP. ) @f=5.05~5.25GHz High power added efficiency P. A. E. =33% (TYP. ) @f=5.05~5.25GHz Low distortion [item -51] IM3= -45dBc (TYP. ) @Po=34.5dBm S. C. L.

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Datasheet Details

Part number MGFC45V5053A
Manufacturer Mitsubishi
File Size 18.26 KB
Description 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
Datasheet download datasheet MGFC45V5053A Datasheet
Additional preview pages of the MGFC45V5053A datasheet.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR MGFC45V5053A 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES (TARGET) Internally matched to 50 (Ω) system High output power P1dB=32W (TYP.) @f=5.05~5.25GHz High power gain GLP=10.0dB (TYP.) @f=5.05~5.25GHz High power added efficiency P.A.E.=33% (TYP.) @f=5.05~5.25GHz Low distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. APPLICATION 5.05~5.
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