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MGFC45V5964A - C band internally matched power GaAs FET

Description

The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9

6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=32W (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power gain GLP=9.0dB (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power added efficiency P. A. E. =33% (TYP. ) @f=5.9.
  • 6.4GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=34.5dBm S. C. L.

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Datasheet preview – MGFC45V5964A

Datasheet Details

Part number MGFC45V5964A
Manufacturer Mitsubishi
File Size 101.72 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC45V5964A Datasheet
Additional preview pages of the MGFC45V5964A datasheet.

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Full PDF Text Transcription

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< C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=9.0dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L APPLICATION  5.9 – 6.4 GHz band power amplifier QUALITY  IG 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) 20.4 +/- 0.2 16.7 0.1 +/- 0.05 2.4 +/- 0.2 4.3 +/- 0.
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