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MGFC47V5864 Datasheet

Manufacturer: Mitsubishi Electric
MGFC47V5864 datasheet preview

MGFC47V5864 Details

Part number MGFC47V5864
Datasheet MGFC47V5864_MitsubishiElectricSemiconductor.pdf
File Size 134.72 KB
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
MGFC47V5864 page 2 MGFC47V5864 page 3

MGFC47V5864 Overview

The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC47V5864 Key Features

  • High output power
  • 6.4GHz
  • High power gain
  • 6.4GHz
  • High power added efficiency
  • 6.4GHz
  • Solid-state power amplifier for satellite earth-station munication transmitter and VSAT
  • VDS=10V
  • ID=9.8A
  • RG=10ohm

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