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MGFC47V5864 - C band internally matched power GaAs FET

Description

The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8

6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class AB operation Internally matched to 50(ohm) system.
  • High output power P1dB=50W (TYP. ) @f=5.8.
  • 6.4GHz.
  • High power gain GLP=9.5dB (TYP. ) @f=5.8.
  • 6.4GHz.
  • High power added efficiency PAE=35% (TYP. ) @f=5.8.
  • 6.4GHz.

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Datasheet preview – MGFC47V5864

Datasheet Details

Part number MGFC47V5864
Manufacturer Mitsubishi
File Size 134.72 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC47V5864 Datasheet
Additional preview pages of the MGFC47V5864 datasheet.

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Full PDF Text Transcription

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< C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class AB operation Internally matched to 50(ohm) system  High output power P1dB=50W (TYP.) @f=5.8 – 6.4GHz  High power gain GLP=9.5dB (TYP.) @f=5.8 – 6.4GHz  High power added efficiency PAE=35% (TYP.) @f=5.8 – 6.4GHz APPLICATION  Solid-state power amplifier for satellite earth-station communication transmitter and VSAT 2MIN . 17 .4 +/-0.2 8.0+/-0.2 2.4 2 MIN. OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 (1) (2 ) (3) 0 .7 +/-0.15 20 .4 +/-0.2 1 6.7 1.3 15.8 4.7 m ax. 2 .
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