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ML101U29 - LASER DIODES

General Description

ML1XX29 is a high-power, high-efficient AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 660nm and standard pulse light output of 400mW.

Key Features

  • High Output Power: 400mW (Pulse).
  • High Efficiency: 0.97W/A (typ. ).
  • Visible Light: 660nm (typ. ).
  • Low Aspect Ratio (θ⊥ / θ//): 1.5 (typ. ).
  • Low Astigmatic Distance: ≦1µm (typ. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UndPerrDeelivmeloinpmareynt TYPE NAME ML101U29 MITSUBISHI LASER DIODES ML1XX29 SERIES FOR OPTICAL INFORMATION SYSTEMS This type is under development. Therefore, please note that this data sheet may be changed without any notice. DESCRIPTION ML1XX29 is a high-power, high-efficient AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 660nm and standard pulse light output of 400mW. ML1XX29 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, ML1XX29 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation at 75 °C. FEATURES •High Output Power: 400mW (Pulse) • High Efficiency: 0.