Datasheet4U Logo Datasheet4U.com
Mitsubishi Electric logo

P3S56D40ETP Datasheet

Manufacturer: Mitsubishi Electric
P3S56D40ETP datasheet preview

Datasheet Details

Part number P3S56D40ETP
Datasheet P3S56D40ETP-Mitsubishi.pdf
File Size 815.69 KB
Manufacturer Mitsubishi Electric
Description 256M Double Data Rate Synchronous DRAM
P3S56D40ETP page 2 P3S56D40ETP page 3

P3S56D40ETP Overview

All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The M2S56D20/30/40ATP achieves very high speed data rate up to 133MHz, and are suitable for main memory in puter systems.

P3S56D40ETP Key Features

  • Vdd=Vddq=2.5V+0.2V
  • Double data rate architecture
  • Bidirectional, data strobe (DQS) is transmitted/received with data
  • Differential clock inputs (CLK and /CLK)
  • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
  • mands entered on each positive CLK edge
  • data and data mask referenced to both edges of DQS
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2.0/2.5 (programmable)
  • Burst length- 2/4/8 (programmable)
Mitsubishi Electric logo - Manufacturer

More Datasheets from Mitsubishi Electric

See all Mitsubishi Electric datasheets

Part Number Description

P3S56D40ETP Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts