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PM150PCMS15D0C0S6D0060
FLAFTL-ABTA-SBEASTEYPTEYPE INSIUNLSAUTLEADTEPDACPKAACGKAEGE
PM150CSD060
FEATURE a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
PM150CSD060 Datasheet
