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PM150RL1A120 - INTELLIGENT POWER MODULES

Key Features

  • Fo In OT OUT Si U VD IF +.
  • GND GND Vcc Fo In GND GND Vcc Fo OT OUT Si W OT OUT Si V ≥ 0.1µ VVP1 VFo 1.5k VD VP VVPC VWP1 WFo 1.5k M VD WP VWPC In GND GND 20k → IF ≥ 10 µ Vcc Fo UN In OT OUT Si N ≥ 0.1µ 20k GND GND OT ≥ 10 µ → IF Vcc VN Fo In OUT Si ≥ 0.1µ 20k GND GND VN1 ≥ 10 µ → Vcc Fo In OT OUT Si B VD IF WN ≥ 0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI PM150RL1A120 FLAT-BASE TYPE INSULATED PACKAGE PM150RL1A120 FEATURE Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible L-series package.