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PM200RSD060 - INTELLIGENT POWER MODULES

Key Features

  • % tc (off) 10% Fo U,V,W VCIN CS Vcc td (on) tr td (off) tf VCIN (15V) Fo (ton= td (on) + tr) N (toff= td (off) + tf) VD (all) Ic Fig. 3 Switching time Test circuit and waveform P, (U,V,W,B) A IN Fo VCIN Pulse VCE VCIN (15V) Over Current VD (all) U,V,W, (N) IC toff (OC) Constant Current OC Fig. 4 ICES Test P, (U,V,W,B) IN Fo Short Circuit Current VCC IC Constant Current SC VCIN VD (all) U,V,W, (N) IC Fig. 5 OC and S.

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MITSUBISHI MITSUBISHI MODULES> PM200RSD060 PM200RSD060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200RSD060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.