Mitsubishi QM20TD-H
Transistor Module
| Part No. | QM20TD-H |
|---|---|
| Datasheet | QM20TD-H Download |
| Manufacturer |  Mitsubishi |
| Description | Transistor Module |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 20 20 100 1 200 –40~+150 –40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2000 1.47~1.96 15~20 90 Unit V V V V A A W A A °C °C V N●m kg●cm gELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching...
