• Part: RA30H4452M1A
  • Description: Silicon RF Power Modules
  • Manufacturer: Mitsubishi Electric
  • Size: 1.10 MB
Download RA30H4452M1A Datasheet PDF
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Datasheet Summary

< Silicon RF Power Modules > RoHS pliance, 440-520MHz 30W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. At V GG1=3.4V, VGG2=5V, the typical gate currents are 1mA. This module is designed for TDMA, therefore this module separated the gate terminal of each MOSFET to make Ton/Toff time rapid. BLOCK DIAGRAM 4 5 Features - Enhancement-Mode...