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RA30H4452M1A Datasheet

Manufacturer: Mitsubishi Electric
RA30H4452M1A datasheet preview

Datasheet Details

Part number RA30H4452M1A
Datasheet RA30H4452M1A-Mitsubishi.pdf
File Size 1.10 MB
Manufacturer Mitsubishi Electric
Description Silicon RF Power Modules
RA30H4452M1A page 2 RA30H4452M1A page 3

RA30H4452M1A Overview

The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases.

RA30H4452M1A Key Features

  • Enhancement-Mode MOSFET
  • Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW
  • Broadband Frequency Range: 440-520MHz
  • High speed Output rise/fall time
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