RA60H3847M1 Datasheet | Mitsubishi Electric

DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range. The battery can be connected directly to the drain of the 3 enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 d B. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power bees available at the state that VGG is 4V (typical) and 5V (maximum). This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling 5 the output power with the input power. FEATURES - Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V) - Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50m W - Broadband Frequency Range: 378-470MHz - Metal shield structure that makes the improvements of spurious radiation simple - Module Size: 67 x 19.4 x 9.9 mm - Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H2M Ro HS PLIANCE - RA60H3847M1 is a Ro HS pliant product. - Ro HS pliance is indicate by the letter “G” after the Lot Marking. - This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of Ro HS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA60H3847M1-501 Antistatic tray, 10...