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RA60H3847M1 - Silicon RF Power Modules

Datasheet Summary

Description

470-MHz range.

enhancement-mode MOSFET transistors.

Features

  • Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V).
  • Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 378-470MHz.
  • Metal shield structure that makes the improvements of spurious radiation simple.
  • Module Size: 67 x 19.4 x 9.9 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. 1 RF Input (Pin) 2 Gate Voltage (.

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Datasheet Details

Part number RA60H3847M1
Manufacturer Mitsubishi
File Size 607.38 KB
Description Silicon RF Power Modules
Datasheet download datasheet RA60H3847M1 Datasheet
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    < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range. The battery can be connected directly to the drain of the 2 3 enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).
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