RA60H3847M1 - Silicon RF Power Modules

Product Overview

Mitsubishi

Datasheet Details

Part number	RA60H3847M1
Manufacturer	Mitsubishi
File Size	607.38 KB
Description	Silicon RF Power Modules
Datasheet	RA60H3847M1 Datasheet
Additional preview pages of the RA60H3847M1 datasheet.

Product details

Description

The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range.The battery can be connected directly to the drain of the 2 3 enhancement-mode MOSFET transistors.Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB.The output power and the drain current increase as the gate voltage increases.The output power and t

Features

Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V).
Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 378-470MHz.
Metal shield structure that makes the improvements of spurious radiation simple.
Module Size: 67 x 19.4 x 9.9 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. 1 RF Input (Pin) 2 Gate Voltage (.

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Published: Apr 16, 2019 |