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MT4435 - 30V P-Channel PowerTrench MOSFET

Download the MT4435 datasheet PDF. This datasheet also covers the MT4435_Mos variant, as both devices belong to the same 30v p-channel powertrench mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process.

25V).

Key Features

  • 8.8 A,.
  • 30 V RDS(ON) = 20 mΩ @ V GS =.
  • 10 V RDS(ON) = 35 mΩ @ V GS =.
  • 4.5 V M O S - T E C S HE M I C O N D U C T O R.
  • Low gate charge (17nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4435_Mos-Tech.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT4435
Manufacturer Mos-Tech
File Size 436.16 KB
Description 30V P-Channel PowerTrench MOSFET
Datasheet download datasheet MT4435 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MT4435 September 2008 MT4435 30V P-Channel PowerTrench® MOSFET General Description This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ V GS = –10 V RDS(ON) = 35 mΩ @ V GS = –4.