Datasheet Summary
September 2008
30V P-Channel PowerTrench® MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
- 25V).
Features
- - 8.8 A,
- 30 V RDS(ON) = 20 mΩ @ V GS =
- 10 V RDS(ON) = 35 mΩ @ V GS =
- 4.5 V
- T E C S HE M I C O N D U C T O R
- Low gate charge (17nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- Power management
- Load switch
- Battery protection
D D SO-8
DD D...
