MT4435 Description
This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
MT4435 Key Features
- 8.8 A, -30 V RDS(ON) = 20 mΩ @ V GS = -10 V RDS(ON) = 35 mΩ @ V GS = -4.5 V
- T E C S HE M I C O N D U C T O R
- Low gate charge (17nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability