Mos-Tech MT4435
This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).| Part No. | MT4435 |
|---|---|
| Datasheet | MT4435 Download |
| Manufacturer |  Mos-Tech |
| Description | 30V P-Channel PowerTrench MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● –8.8 A, –30 V RDS(ON) = 20 mΩ @ V GS = –10 V RDS(ON) = 35 mΩ @ V GS = –4.5 V M O S - T E C S HE M I C O N D U C T O R● Low gate charge (17nC typical)
● Fast switching speed
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability
APPLICATIONS
● Power management● Load switch
● Battery protection D D SO-8 DD DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8
ABSOLUTE MAXIMUM RATINGS
Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –30 ±25 (Note 1a) Units V V A W –8.8 –50 2.5 1.2 1 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1)...
