V29LC51001 Datasheet | Mosel Vitelic Corp

Description PRELIMINARY Features s s s s s 128Kx8-bit Organization Address Access Time: 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 512 bytes per Sector, 256 Sectors - Sector-Erase Cycle Time: 10ms (Max) - Byte-Program Cycle Time: 30µs (Max) Minimum 1,000 Erase-Program Cycles Low power dissipation - Active Read Current: 20m A (Typ) - Active Program Current: 30m A (Typ) - Standby Current: 100µA (Max) Low VCC Program Inhibit Below 3.2V Self-timed program/erase operations CMOS and TTL Interface Packages: - 32-pin Plastic DIP - 32-pin PLCC s s The V29LC51001 is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. The V29LC51001 features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase. s s s s Device Usage Chart Operating Temperature Range 0°C to 70°C Package Outline P - J - Access Time (ns) 90 - Temperature Mark Blank V29LC51001 Rev. 0.5 October 2000 MOSEL VITELIC V 29 LC 51 001 - V29LC51001 OPERATING VOLTAGE 51: 5V DEVICE 90: 90ns SPEED PKG. TEMP. BLANK (0°C TO 70°C) P = PDIP J = PLCC L51001-01 Pin Configurations VCC WE A12 A15 A16 NC N/C A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 32-Pin PDIP 26 Top View 25 24 23 22 21 20 19 18 17 51001-02 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 VCC WE NC A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4...