Description
The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16.
Features
- 4 banks x 4Mbit x 16 organization.
- High speed data transfer rates up to 166 MHz.
- Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge.
- Single Pulsed RAS Interface.
- Data Mask for Read/Write Control.
- Four Banks controlled by BA0 & BA1.
- Programmable CAS Latency: 2, 3.
- Programmable Wrap Sequence: Sequential or Interleave.
- Programmable Burst Length: 1, 2, 4, 8 for Sequential Type 1, 2, 4, 8 for Interleave Type.
- Multiple Burs.
V54C3256164VBUT Datasheet
