epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory
Flammab.
Full PDF Text Transcription for S16C30 (Reference)
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S16C30. For precise diagrams, and layout, please refer to the original PDF.
MOSPEC S16C30 thru S16C60 Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epita...
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lybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 8KV(Min.
S16C30 Datasheet
