• Part: S20C100C
  • Description: Schottky Barrier Power Rectifiers
  • Manufacturer: Mospec Semiconductor
  • Size: 60.71 KB
Download S20C100C Datasheet PDF
S20C100C page 2
Page 2

Datasheet Summary

MOSPEC S20C70C Thru S20C100C Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. - Low Forward Voltage. - Low Switching noise. - High Current Capacity - Guarantee Reverse Avalanche. - Guard-Ring for Stress Protection. - Low Power Loss & High efficiency. - 150 Operating Junction Temperature - Low Stored Charge Majority Carrier Conduction. - Plastic Material used Carries Underwriters Laboratory Plating pb free The...