Download the S20C50CE datasheet PDF.
This datasheet also covers the S20C40CE variant, as both devices belong to the same schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.
Key Features
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150¢J Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriter.
Note: The manufacturer provides a single datasheet file (S20C40CE_MospecSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for S20C50CE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
S20C50CE. For precise diagrams, and layout, please refer to the original PDF.
FIERS 20 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150¢J Operating Junction Temperature Low Stored Charge Majority Carrier Conduction.
S20C50CE Datasheet
