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S20C70C - Schottky Barrier Power Rectifiers

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 150 Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.
  • Plastic Material.

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Datasheet preview – S20C70C

Datasheet Details

Part number S20C70C
Manufacturer Mospec Semiconductor
File Size 60.71 KB
Description Schottky Barrier Power Rectifiers
Datasheet download datasheet S20C70C Datasheet
Additional preview pages of the S20C70C datasheet.

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Full PDF Text Transcription

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MOSPEC S20C70C Thru S20C100C Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.
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