Datasheet4U Logo Datasheet4U.com

S20C90C - Schottky Barrier Power Rectifiers

This page provides the datasheet information for the S20C90C, a member of the S20C70C Schottky Barrier Power Rectifiers family.

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 150 Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.
  • Plastic Material.

📥 Download Datasheet

Datasheet preview – S20C90C

Datasheet Details

Part number S20C90C
Manufacturer Mospec Semiconductor
File Size 60.71 KB
Description Schottky Barrier Power Rectifiers
Datasheet download datasheet S20C90C Datasheet
Additional preview pages of the S20C90C datasheet.

📁 Similar Datasheet

  • S20C90 - Schottky Barrier Power Rectifiers (MOSPEC)
  • S20C100 - Schottky Barrier Power Rectifiers (MOSPEC)
  • S20C200C - Schottky Barrier Rectifiers (MOSPEC)
  • S20C60CT - SCHOTTKY BARRIER RECTIFIERS (Compact Technology)
  • S20C70 - Schottky Barrier Power Rectifiers (MOSPEC)
  • S20C80 - Schottky Barrier Power Rectifiers (MOSPEC)
  • S20 - Silicon Power Rectifier (Microsemi Corporation)
  • S2000 - Silicon NPN Transistor (Toshiba)
  • S2000 - NPN Transistor (INCHANGE)
  • S2000 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Mospec Semiconductor
  • S20C100C - Schottky Barrier Power Rectifiers
  • S20C30 - SCHOTTKY BARRIER RECTIFIERS
  • S20C30CE - Schottky Barrier Rectifiers
  • S20C35 - SCHOTTKY BARRIER RECTIFIERS
  • S20C40 - SCHOTTKY BARRIER RECTIFIERS
  • S20C40CE - Schottky Barrier Rectifiers
  • S20C45 - SCHOTTKY BARRIER RECTIFIERS
  • S20C45CE - Schottky Barrier Rectifiers

Full PDF Text Transcription

Click to expand full text
MOSPEC S20C70C Thru S20C100C Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.
Published: |